MRFE6S9205HSR3
RF MOSFET LDMOS 28V NI880SManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRFE6S9205HSR3 is a high-performance LDMOS RF power transistor designed for demanding applications. This device operates at a 28V test voltage and delivers 58W of output power at 880MHz, with a typical gain of 21.2dB. Engineered for robust thermal performance, it is housed in the NI-880S package with surface mount capability and supplied on tape and reel for automated assembly. The MRFE6S9205HSR3 is suitable for use in base station infrastructure, mobile infrastructure, and industrial RF power applications where efficiency and reliability are paramount. Its 28V operation and 1.4A test current rating make it a versatile choice for high-frequency power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 880MHz |
| Power - Output | 58W |
| Gain | 21.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880S |
| Voltage - Rated | 66 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
