MRFE6S9130HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRFE6S9130HR3 is an RF MOSFET designed for high-power applications. This LDMOS device operates at 880MHz, delivering a 27W output power with a typical gain of 19.2dB. It is rated for a breakdown voltage of 66V, with testing conducted at 28V and 950mA. The component is housed in a NI-780H-2L package, specifically SOT-957A, and is supplied on tape and reel. Its robust performance characteristics make it suitable for use in base station infrastructure, industrial heating, and other demanding RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 27W |
| Gain | 19.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 66 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
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