MRFE6S9125NBR1
RF MOSFET LDMOS 28V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRFE6S9125NBR1 is a high-performance LDMOS RF power transistor designed for demanding applications. This component operates at 880MHz with a typical gain of 20.2dB and delivers 27W of output power at a 28V test voltage. Engineered with LDMOS technology, it offers robust performance for RF power amplification. The device is supplied in a TO-272 WB-4 package, suitable for chassis mounting and provided on tape and reel. Key specifications include a 950mA test current and a rated voltage of 66V. This transistor is commonly utilized in base station infrastructure and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 27W |
| Gain | 20.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 66 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
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