MRFE6P3300HR5
RF MOSFET LDMOS 32V NI860C3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRFE6P3300HR5 is a high-power RF MOSFET designed for demanding applications. This LDMOS device operates within the 857MHz to 863MHz frequency range, delivering a nominal output power of 270W with a typical gain of 20.4dB. Engineered for robustness, it features a 32V test voltage and a 66V rated voltage, ensuring reliable performance under stress. The MRFE6P3300HR5 is housed in the NI-860C3 package, suitable for chassis mounting and supplied on tape and reel for automated assembly. This component is frequently utilized in base station infrastructure and other high-frequency power amplification systems where efficiency and power density are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860C3 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 857MHz ~ 863MHz |
| Power - Output | 270W |
| Gain | 20.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860C3 |
| Voltage - Rated | 66 V |
| Voltage - Test | 32 V |
| Current - Test | 1.6 A |