MRFE6P3300HR3
RF MOSFET LDMOS 32V NI860C3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRFE6P3300HR3 is a high-performance RF power LDMOS transistor designed for demanding wireless infrastructure applications. This device operates within the 857MHz to 863MHz frequency range, delivering a significant 270W of output power with a typical gain of 20.4dB. Built on NXP's advanced LDMOS technology, it offers exceptional linearity and efficiency. The MRFE6P3300HR3 is packaged in the NI-860C3, suitable for chassis mounting and supplied on tape and reel for automated assembly. Its robust design makes it ideal for base station transmitters, broadcast systems, and other high-power RF applications requiring reliable performance. The transistor is rated for a voltage of 66V, with testing performed at 32V and a test current of 1.6A.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860C3 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 857MHz ~ 863MHz |
| Power - Output | 270W |
| Gain | 20.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860C3 |
| Voltage - Rated | 66 V |
| Voltage - Test | 32 V |
| Current - Test | 1.6 A |
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