MRF9210R5
RF MOSFET LDMOS 26V NI860C3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF9210R5 is a high-performance RF LDMOS transistor designed for demanding applications. This component operates at 880MHz, delivering 40W of output power with a typical gain of 16.5dB. It is rated for a drain voltage of 65V and tested at 26V, with a test current of 1.9A. The NI-860C3 package offers robust thermal performance suitable for chassis mounting. This device is widely utilized in broadband communications, base stations, and industrial RF power amplification systems. The MRF9210R5 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860C3 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 40W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860C3 |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 1.9 A |
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