MRF9180R6
RF MOSFET LDMOS 26V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF9180R6 is a 26V LDMOS RF power transistor designed for high-power, high-frequency applications. This component operates at 880MHz, delivering an output power of 170W with a gain of 17.5dB at a test current of 1.4A. The MRF9180R6 features a 65V breakdown voltage and is housed in a NI-1230 package, suitable for chassis mounting. Its LDMOS technology ensures excellent performance characteristics for demanding RF power amplification tasks. This device is commonly utilized in base station infrastructure and other high-performance wireless communication systems. The component is supplied on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 170W |
| Gain | 17.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 1.4 A |