MRF9120LR5
RF MOSFET LDMOS 26V NI860Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF9120LR5 is a high-power LDMOS RF power transistor designed for demanding RF applications. This device operates at 880MHz, delivering 120W of output power with a typical gain of 16.5dB. Engineered for robust performance, it features a 26V test voltage and a 1A test current, utilizing advanced LDMOS technology for efficient amplification. The MRF9120LR5 is presented in a NI-860 package, suitable for chassis mounting and supplied on tape and reel for automated assembly. This component is a critical element in base station infrastructure, broadcast transmitters, and industrial RF heating systems, ensuring reliable and powerful RF signal generation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 120W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860 |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 1 A |
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