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MRF9120LR3

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MRF9120LR3

RF MOSFET LDMOS 26V NI860

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

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NXP USA Inc. MRF9120LR3 is an RF LDMOS power transistor designed for high-performance applications. This device operates at 880MHz, delivering 120W of output power with a typical gain of 16.5dB. Featuring a 26V test voltage, it is built on LDMOS technology for robust performance. The MRF9120LR3 is supplied in a NI-860 package and is available on tape and reel. Its specifications make it suitable for use in base station infrastructure and other demanding wireless communication systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Download Free CAD Model:Link image
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-860
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency880MHz
Power - Output120W
Gain16.5dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageNI-860
Voltage - Rated65 V
Voltage - Test26 V
Current - Test1 A

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