MRF9120LR3
RF MOSFET LDMOS 26V NI860Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF9120LR3 is an RF LDMOS power transistor designed for high-performance applications. This device operates at 880MHz, delivering 120W of output power with a typical gain of 16.5dB. Featuring a 26V test voltage, it is built on LDMOS technology for robust performance. The MRF9120LR3 is supplied in a NI-860 package and is available on tape and reel. Its specifications make it suitable for use in base station infrastructure and other demanding wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 120W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860 |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 1 A |
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