MRF8VP13350GNR3
RF MOSFET LDMOS 50V OM780G-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8VP13350GNR3 is a high-power RF LDMOS power transistor designed for robust performance in demanding applications. This device operates at a frequency of 1.3GHz, delivering a significant output power of 350W with a typical gain of 19.2dB. The transistor is rated for a voltage of 100V and tested at 50V, with a test current of 100mA. Its LDMOS technology ensures excellent linearity and efficiency. The MRF8VP13350GNR3 is housed in an OM-780G-4L package, suitable for surface mount configurations. This component finds application in base station infrastructure, industrial heating, and other high-frequency power amplification systems. The part is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780G-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.3GHz |
| Configuration | Dual |
| Power - Output | 350W |
| Gain | 19.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780G-4L |
| Voltage - Rated | 100 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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