MRF8S9200NR3
RF MOSFET LDMOS 28V OM780-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. MRF8S9200NR3 is a high-performance RF power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) utilizing LDMOS technology. Designed for robust operation, this component delivers 58W of output power at a 940MHz frequency. It features a typical gain of 19.9dB and is rated for a drain-source voltage of 70V, with a test voltage of 28V. The device is specified with a continuous drain current of 1.4A. Supplied in the OM-780-2 package, this surface-mount transistor is suitable for demanding applications within the wireless infrastructure and industrial heating sectors. The MRF8S9200NR3 is provided on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780-2 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 940MHz |
| Power - Output | 58W |
| Gain | 19.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780-2 |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
Request a Quote
Clients Also Buy
BLF988S,112
RF MOSFET LDMOS 50V SOT539B
A2T18S165-12SR3
RF MOSFET LDMOS 28V NI780
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
