MRF8S9100HR5
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S9100HR5 is an RF LDMOS FET designed for high-power applications. This component operates at 920MHz with a typical output power of 72W and a gain of 19.3dB. It features a 28V test voltage and is rated for up to 70V. The device is constructed using LDMOS technology, offering robust performance in demanding RF environments. Packaged in a NI-780H-2L (SOT-957A) and supplied on tape and reel, this FET is suitable for chassis mounting. Its specifications make it a critical component in wireless infrastructure, base stations, and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 920MHz |
| Power - Output | 72W |
| Gain | 19.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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