MRF8S9100HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S9100HR3 is an RF LDMOS power transistor designed for high-power RF applications. This device operates at 920MHz with a specified output power of 72W and a gain of 19.3dB at a test current of 500mA and 28V. It utilizes LDMOS technology for robust performance. The MRF8S9100HR3 is housed in an NI-780H-2L package, suitable for chassis mounting. This component finds application in base station infrastructure, broadcast transmitters, and other demanding wireless communication systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 920MHz |
| Power - Output | 72W |
| Gain | 19.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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