MRF8S8260HSR3
RF MOSFET LDMOS 28V NI880SManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. RF Power LDMOS Transistor, MRF8S8260HSR3. This 28V, 70W device operates at 895MHz, delivering a typical gain of 21.1dB with a test current of 1.5A. Featuring LDMOS technology, it is housed in the NI-880S package for surface mounting and supplied on tape and reel. This component is suitable for demanding RF power applications across various industries, including wireless infrastructure and base stations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 895MHz |
| Power - Output | 70W |
| Gain | 21.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880S |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 1.5 A |