MRF8S26120HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S26120HR3 is an RF power LDMOS transistor designed for high-performance applications. This device operates at a supply voltage of 28 V and delivers 28 W of output power at a frequency of 2.69 GHz, with a typical gain of 15.6 dB. Featuring the NI-780H-2L package in a Tape & Reel (TR) configuration, it is suitable for chassis mount installations. The MRF8S26120HR3 is engineered for demanding wireless infrastructure and base station applications, leveraging NXP's advanced LDMOS technology for robust performance and efficiency.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.69GHz |
| Power - Output | 28W |
| Gain | 15.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 900 mA |
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