MRF8S26060HR3
RF MOSFET LDMOS 28V NI400Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S26060HR3 is a high-performance RF power LDMOS transistor designed for demanding applications. This device operates at 2.69 GHz, delivering 15.5W of output power with a typical gain of 16.3dB at a test current of 450mA and 28V drain-source voltage. Featuring LDMOS technology, it offers robust performance and efficiency. The MRF8S26060HR3 is housed in a NI-400-240 package, suitable for chassis mounting and supplied on tape and reel. This component finds application in wireless infrastructure and other demanding RF power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-400-240 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.69GHz |
| Power - Output | 15.5W |
| Gain | 16.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-400-240 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 450 mA |