MRF8S23120HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S23120HR3 is an LDMOS RF power transistor designed for high-frequency applications. This device operates at 2.3GHz, delivering a power output of 28W with a typical gain of 16dB. It is rated for a drain voltage of 65V and tested at 28V with a drain current of 800mA. The MRF8S23120HR3 is packaged in a NI-780H-2L (SOT-957A) and supplied on tape and reel. Its robust design makes it suitable for use in base station infrastructure and other demanding RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Power - Output | 28W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 800 mA |
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