MRF8S21200HSR5
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S21200HSR5 is a high-performance RF LDMOS power transistor designed for demanding applications. This component operates at a frequency of 2.14 GHz, delivering a significant output power of 48W with a typical gain of 18.1 dB. It is rated for 65V with a test voltage of 28V and can handle a test current of 1.4A. The MRF8S21200HSR5 features the NI-1230S package, suitable for chassis mounting and supplied on tape and reel for automated assembly. This device is engineered for use in broadband infrastructure, cellular base stations, and other high-power RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.14GHz |
| Configuration | Dual |
| Power - Output | 48W |
| Gain | 18.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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