MRF8S21200HR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S21200HR6 is a high-performance RF LDMOS transistor designed for demanding applications. This dual-channel device operates at 2.14 GHz, delivering 48W of output power with a typical gain of 18.1dB. Featuring a 28V test voltage and a 1.4A test current, it utilizes advanced LDMOS technology for superior efficiency and linearity. The MRF8S21200HR6 is housed in a robust NI-1230 package suitable for chassis mounting and is supplied on tape and reel (TR) for automated assembly. This component is integral to base station infrastructure, wireless communication systems, and other high-frequency power amplification circuits across various telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.14GHz |
| Configuration | Dual |
| Power - Output | 48W |
| Gain | 18.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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