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MRF8S21140HSR3

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MRF8S21140HSR3

RF MOSFET LDMOS 28V NI780

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. MRF8S21140HSR3 is a high-performance RF power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) utilizing LDMOS technology. Engineered for robust RF applications, this device operates at a 28V test voltage and delivers 34W of output power at 2.14GHz. It features a gain of 17.9dB and a typical test current of 970 mA. The component is supplied in a NI-780S package, designed for chassis mounting and delivered on tape and reel (TR). Its specifications make it suitable for use in wireless infrastructure, base stations, and other demanding RF power amplification systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-780S
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency2.14GHz
Power - Output34W
Gain17.9dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageNI-780S
Voltage - Rated65 V
Voltage - Test28 V
Current - Test970 mA

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