MRF8S21100HSR5
RF MOSFET 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF8S21100HSR5 RF MOSFET, 28V, 700mA, 2.17GHz, 18.3dB gain, and 24W output power. This N-channel silicon carbide enhancement-mode MOSFET is packaged in a NI-780H-2L (SOT-957A) and supplied on tape and reel. Designed for high-frequency applications, it features a rated voltage of 65V and a test voltage of 28V. This component is ideal for use in wireless infrastructure, base stations, and other high-power RF applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Configuration | N-Channel |
| Power - Output | 24W |
| Gain | 18.3dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
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