MRF8S21100HR5
RF MOSFET 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S21100HR5 is a high-performance RF MOSFET designed for demanding wireless applications. This N-channel device operates at 2.17 GHz, delivering a power output of 24W with a test current of 700 mA. It achieves a gain of 18.3 dB under a test voltage of 28V. The MRF8S21100HR5 is housed in an NI-780H-2L package, specifically the SOT-957A, and is supplied on tape and reel. Its robust construction and electrical characteristics make it suitable for use in base station infrastructure, point-to-point radio systems, and other high-frequency communication equipment. The component leverages MOSFET technology for efficient power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Configuration | N-Channel |
| Power - Output | 24W |
| Gain | 18.3dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
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