MRF8S21100HR3
RF MOSFET 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S21100HR3 is a high-performance N-channel RF MOSFET designed for demanding applications. This component operates at 2.17GHz, delivering 24W of output power with a typical gain of 18.3dB at a 28V test voltage and 700mA test current. Engineered with Metal Oxide technology, it offers robust performance in a NI-780H-2L package, suitable for chassis mounting. The MRF8S21100HR3 is utilized in sectors such as wireless infrastructure and defense communications. This component is supplied on a Tape & Reel (TR) for efficient manufacturing integration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Configuration | N-Channel |
| Power - Output | 24W |
| Gain | 18.3dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
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