MRF8S19140HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8S19140HR3 is an RF power MOSFET utilizing LDMOS technology. This component is designed for operation at 1.96GHz, delivering 34W of output power with a typical gain of 19.1dB. The device is rated for 65V but is tested at 28V, with a test current of 1.1A. It is supplied in the NI-780H-2L package, a 2-lead, through-hole configuration SOT-957A, suitable for chassis mounting. This RF power transistor is commonly employed in cellular infrastructure and base station applications where high efficiency and linearity are paramount. The component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.96GHz |
| Power - Output | 34W |
| Gain | 19.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
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