MRF8S18210WHSR5
RF MOSFET 30V NI880XSManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF8S18210WHSR5 is a high-power RF MOSFET designed for demanding wireless infrastructure applications. This N-Channel device operates at 1.93GHz, delivering 50W of output power with a typical gain of 17.8dB at a 30V test voltage and 1.3A test current. Built on advanced MOSFET technology, it features a robust NI-880XS package for surface mounting, ensuring reliable performance in challenging environments. Its 65V voltage rating further enhances its suitability for high-power RF amplification stages, commonly found in base stations and other telecommunications equipment. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880XS |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.93GHz |
| Configuration | N-Channel |
| Power - Output | 50W |
| Gain | 17.8dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | NI-880XS |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.3 A |
Request a Quote
Clients Also Buy
BLF988S,112
RF MOSFET LDMOS 50V SOT539B
A2T18S165-12SR3
RF MOSFET LDMOS 28V NI780
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
