MRF8S18210WHSR3
RF MOSFET 30V NI880XSManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8S18210WHSR3 is a high-power RF MOSFET designed for demanding wireless infrastructure applications. This N-channel device operates at 1.93 GHz, delivering 50W of output power with a typical gain of 17.8dB. It features a 30V test voltage and a 65V breakdown voltage, ensuring robust performance in high-voltage environments. The MRF8S18210WHSR3 is housed in a NI-880XS package for surface mounting and is supplied on tape and reel (TR) for automated assembly. Its advanced MOSFET technology provides efficient amplification for base station and point-to-point communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880XS |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.93GHz |
| Configuration | N-Channel |
| Power - Output | 50W |
| Gain | 17.8dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | NI-880XS |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.3 A |
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