MRF8S18210WGHSR3
RF MOSFET 30V NI880XSManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8S18210WGHSR3 is a high-performance RF MOSFET designed for demanding applications. This N-channel device operates at 1.93GHz, delivering 50W of output power with a gain of 17.8dB. It features a 30V test voltage and a 1.3A test current, utilizing advanced MOSFET technology. Supplied in the NI-880XS-2 GULL package, it is suitable for surface mount configurations and comes on tape and reel (TR) for efficient assembly. This component is commonly employed in base station infrastructure and other high-frequency wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880XS-2 GW |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.93GHz |
| Configuration | N-Channel |
| Power - Output | 50W |
| Gain | 17.8dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | NI-880XS-2 GULL |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.3 A |
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