MRF8S18120HR5
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8S18120HR5 is a high-performance RF power MOSFET utilizing LDMOS technology. This device operates at 1.81 GHz, delivering an output power of 72W with a typical small-signal gain of 18.2dB. It is designed for a rated voltage of 65V and tested at 28V with a current of 800mA. The component is supplied in the NI-780H-2L package, suitable for chassis mounting and provided on tape and reel. This RF MOSFET is engineered for demanding applications in cellular infrastructure and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Power - Output | 72W |
| Gain | 18.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 800 mA |
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