MRF8P9040NBR1
RF MOSFET LDMOS 28V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P9040NBR1 is an RF power LDMOS transistor designed for high-frequency applications. This device features a 28V test voltage and 320mA test current, delivering 4W of output power at 960MHz with a 19.1dB gain. Constructed with LDMOS technology, it is housed in a TO-272 WB-4 package, suitable for chassis mounting. The MRF8P9040NBR1 is optimized for performance in wireless infrastructure and base station applications where robust RF power amplification is critical. It is supplied on a tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 960MHz |
| Configuration | Dual |
| Power - Output | 4W |
| Gain | 19.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 320 mA |
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