MRF8P8300HSR5
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P8300HSR5 is a high-power LDMOS RF power transistor designed for demanding applications. This device operates at 820MHz with a typical gain of 20.9dB and delivers 96W of output power. It is rated for a drain voltage of 70V, with testing conducted at 28V and 2A. The MRF8P8300HSR5 utilizes NXP's advanced LDMOS technology for superior performance and reliability. Its NI-1230S package is suitable for chassis mounting and is supplied on tape and reel for automated assembly. This component is widely employed in base station infrastructure, broadcast transmitters, and other high-frequency power amplifier systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 820MHz |
| Configuration | Dual |
| Power - Output | 96W |
| Gain | 20.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 2 A |