MRF8P8300HR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8P8300HR6 is a high-performance RF LDMOS power transistor designed for demanding applications. This dual-channel device operates at 820MHz, delivering 96W of output power with a gain of 20.9dB at a 28V test voltage and 2A test current. Its robust NI-1230 package ensures reliable thermal management for chassis mounting. This component is integral to base station infrastructure and other high-power radio frequency systems, offering exceptional efficiency and linearity. It is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 820MHz |
| Configuration | Dual |
| Power - Output | 96W |
| Gain | 20.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 2 A |