MRF8P29300HSR6
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF8P29300HSR6 is a high-power LDMOS RF power transistor designed for demanding applications. This dual-device offers a robust 320W output power at a 2.9GHz operating frequency, with a typical gain of 13.3dB. It features a 30V test voltage and a 65V rating, making it suitable for applications requiring significant power handling. The NI-1230S package provides a chassis mount solution for efficient thermal management. This component is frequently utilized in base station infrastructure and other professional mobile radio communication systems. It is supplied in a Tape & Reel (TR) configuration for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.9GHz |
| Configuration | Dual |
| Power - Output | 320W |
| Gain | 13.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 100 mA |