MRF8P29300HR6
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8P29300HR6 is an RF power MOSFET utilizing LDMOS technology. This dual-MOSFET device is packaged in the NI-1230, designed for chassis mounting and supplied on tape and reel. It operates at a frequency of 2.9GHz, delivering an output power of 320W with a power gain of 13.3dB. Tested at 30V, the device is rated for a drain-source voltage of 65V and a test current of 100mA. This component is suitable for applications in wireless infrastructure and base stations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.9GHz |
| Configuration | Dual |
| Power - Output | 320W |
| Gain | 13.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 100 mA |
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