MRF8P29300HR5
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8P29300HR5 is a high-power RF LDMOS transistor designed for demanding applications. Featuring a 30V test voltage and 65V rated voltage, this device delivers 320W of output power at 2.9GHz with a 13.3dB gain. The NI-1230 package, supplied on tape and reel, facilitates efficient integration into chassis-mount designs. This component is engineered for robust performance in wireless infrastructure, radar systems, and other high-frequency communications equipment. Its LDMOS technology ensures excellent thermal stability and reliability for continuous operation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.9GHz |
| Configuration | Dual |
| Power - Output | 320W |
| Gain | 13.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 100 mA |