MRF8P26080HSR5
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P26080HSR5 is a high-performance RF power transistor utilizing LDMOS technology. This dual MOSFET component is designed for demanding RF applications, operating at a 28V test voltage with a 300mA test current. It delivers 14W of output power at a frequency of 2.62GHz, achieving a gain of 15dB. The device is housed in a NI-780S-4L surface-mount package and supplied on tape and reel (TR). This component is suitable for use in base station infrastructure and other wireless communication systems requiring robust RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.62GHz |
| Configuration | Dual |
| Power - Output | 14W |
| Gain | 15dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 300 mA |