MRF8P23080HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8P23080HR3 is a high-performance RF power MOSFET designed for demanding wireless infrastructure applications. This LDMOS device operates efficiently at 2.3GHz, delivering 16W of output power with a typical gain of 14.6dB. Featuring a robust 28V test voltage and a 280mA test current, it is constructed using advanced LDMOS technology for superior linearity and power efficiency. The MRF8P23080HR3 is packaged in a NI-780-4, suitable for chassis mounting and supplied on tape and reel (TR). Its advanced characteristics make it ideal for base station transmitters, point-to-point radio, and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Configuration | Dual |
| Power - Output | 16W |
| Gain | 14.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 280 mA |
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