MRF8P20165WHR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF8P20165WHR3 is a high-performance RF LDMOS transistor designed for robust performance in demanding applications. This device operates within the 1.98GHz to 2.01GHz frequency band, delivering a power output of 37W with a typical gain of 14.8dB. Engineered with LDMOS technology, it is rated for 65V, with testing conducted at 28V and 550mA. The NI-780-4 package configuration is ideal for efficient thermal management and reliable chassis mounting. This component is commonly utilized in base station infrastructure and other wireless communication systems requiring high efficiency and linearity. Supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.98GHz ~ 2.01GHz |
| Configuration | Dual |
| Power - Output | 37W |
| Gain | 14.8dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 550 mA |