MRF8P20160HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P20160HR3 is a high-performance LDMOS RF power transistor. This device operates with a rated voltage of 65V and features a 28V test voltage, delivering up to 37W of output power at 1.92GHz. It offers a typical gain of 16.5dB with a test current of 550mA. The MRF8P20160HR3 is housed in a NI-780-4 package, designed for chassis mounting, and supplied in Tape & Reel (TR) packaging. This component is suitable for applications in base station infrastructure and other demanding RF power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.92GHz |
| Configuration | Dual |
| Power - Output | 37W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 550 mA |
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