MRF8P20140WHSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P20140WHSR3 is an LDMOS RF power MOSFET designed for high-frequency applications. This dual-configuration device operates within the 1.88GHz to 1.91GHz frequency range, delivering a power output of 24W at a test voltage of 28V. It exhibits a gain of 16dB with a test current of 500 mA. The component is housed in a NI-780S-4L surface-mount package, supplied on tape and reel. This RF MOSFET is suitable for use in wireless infrastructure and base station applications. The rated voltage is 65V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.88GHz ~ 1.91GHz |
| Configuration | Dual |
| Power - Output | 24W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |