MRF8P20140WHR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P20140WHR3 is a high-performance LDMOS RF power transistor designed for demanding wireless applications. This dual-gate device operates within the 1.88 GHz to 1.91 GHz frequency range, delivering a robust 24W of output power with a typical gain of 16dB. Rated at 65V with a test voltage of 28V and a test current of 500mA, it utilizes LDMOS technology for optimal efficiency and linearity. The MRF8P20140WHR3 is supplied in a NI-780-4 package, suitable for chassis mounting and provided on tape and reel. This component finds extensive use in base station infrastructure and other high-frequency power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.88GHz ~ 1.91GHz |
| Configuration | Dual |
| Power - Output | 24W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |