MRF8P20140WGHSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P20140WGHSR3 is a high-performance LDMOS RF power transistor designed for demanding applications. This device operates within the 1.88GHz to 1.91GHz frequency range, delivering a robust 24W of output power with a typical gain of 16dB. Tested at 28V and 500mA, it features a 65V breakdown voltage and is housed in a NI-780S-4L package for surface mounting. Its LDMOS technology ensures excellent thermal performance and reliability. This component is commonly utilized in base station infrastructure, wireless communication systems, and other RF power amplification scenarios requiring efficient and dependable operation. The MRF8P20140WGHSR3 is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.88GHz ~ 1.91GHz |
| Configuration | Dual |
| Power - Output | 24W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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