MRF8P20100HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF8P20100HR3 is a high-performance RF LDMOS transistor designed for demanding RF power applications. This device operates at a 28V test voltage, delivering 20W of output power at a frequency of 2.03GHz with a gain of 16dB. The MRF8P20100HR3 features a 400mA test current and is housed in a NI-780-4 package, suitable for chassis mounting. Its robust LDMOS technology ensures reliability and efficiency in broadband amplifiers, base station infrastructure, and other high-frequency communication systems. The component is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.03GHz |
| Configuration | Dual |
| Power - Output | 20W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 400 mA |
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