MRF8HP21080HSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF8HP21080HSR3 is a high-performance RF power MOSFET utilizing LDMOS technology. This component is rated for 65V with a 28V test voltage, delivering 16W of output power at a frequency of 2.17GHz. It features a gain of 14.4dB and a continuous drain current of 150mA, making it suitable for demanding RF applications. The device is supplied in a NI-780S-4L package for surface mounting and is provided on a Tape & Reel (TR) for automated assembly. This RF MOSFET is commonly employed in base station infrastructure and other broadband radio frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Configuration | Dual |
| Power - Output | 16W |
| Gain | 14.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 150 mA |