MRF7S38010HR5
RF MOSFET LDMOS 30V NI400Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF7S38010HR5 is an RF LDMOS power transistor designed for high-frequency applications. This device operates within a frequency range of 3.4 GHz to 3.6 GHz, providing a typical gain of 15 dB. It is rated for a 65 V drain-source voltage and features a 30 V test voltage. The MRF7S38010HR5 delivers 2W of output power at a test current of 160 mA. The device is supplied in a NI-400-240 package, suitable for chassis mounting, and is available on tape and reel (TR) for automated assembly. This component is commonly utilized in base station infrastructure and other demanding wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-400-240 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 3.4GHz ~ 3.6GHz |
| Power - Output | 2W |
| Gain | 15dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-400-240 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 160 mA |
Request a Quote
Clients Also Buy
BLF988S,112
RF MOSFET LDMOS 50V SOT539B
A2T18S165-12SR3
RF MOSFET LDMOS 28V NI780
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
