MRF7S35120HSR3
INTEGRATED CIRCUITS (ICS) MRF7S35120HSR3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF FET MRF7S35120HSR3 is a high-power RF power transistor designed for demanding wireless infrastructure applications. This device operates in the 3.5 GHz frequency band, offering robust performance for base station and point-to-point communication systems. Engineered for efficiency and reliability, the MRF7S35120HSR3 utilizes advanced GaN-on-SiC technology, providing superior thermal management and power handling capabilities. Its optimized design ensures linearity and low distortion, crucial for maintaining signal integrity in advanced modulation schemes. The component is supplied in Tray packaging, facilitating efficient integration into high-volume manufacturing processes across industries such as telecommunications, defense, and satellite communications.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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