MRF7S27130HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF7S27130HR3 is a high-performance RF LDMOS transistor designed for demanding applications. This device operates at a typical drain current of 1.5 A with a 28 V test voltage, delivering 23 W of output power at 2.7 GHz. It features a substantial gain of 16.5 dB, optimized for efficient signal amplification in wireless infrastructure and base station equipment. The MRF7S27130HR3 is housed in a NI-780H-2L package, a robust 2-lead flange package suitable for chassis mounting, ensuring effective thermal management. This component is a key building block in high-frequency power amplifier designs across various telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.7GHz |
| Power - Output | 23W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.5 A |
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