MRF7S21210HSR5
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF7S21210HSR5 is an RF power MOSFET utilizing LDMOS technology, designed for high-frequency applications. This device operates with a 28V test voltage and delivers 63W of output power at 2.17GHz, exhibiting a gain of 18.5dB. The NI-780S package provides robust thermal performance, suitable for demanding operational environments. Key specifications include a 1.4A test current and a rated voltage of 65V. This component is commonly employed in base station infrastructure and other wireless communication systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Power - Output | 63W |
| Gain | 18.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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