MRF7S21210HSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the MRF7S21210HSR3, an RF MOSFET designed for high-power applications. This LDMOS device operates at a test voltage of 28V and features a 65V rated voltage, with a robust 1.4A test current. Delivering 63W of output power at a frequency of 2.17GHz, it offers a significant gain of 18.5dB. The MRF7S21210HSR3 is housed in a NI-780S package and is supplied on a Tape & Reel (TR). This component is suitable for use in wireless infrastructure and base station applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Power - Output | 63W |
| Gain | 18.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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