MRF7S21170HR5
RF MOSFET LDMOS 28V NI880HManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF7S21170HR5 is a 2.17 GHz RF power MOSFET featuring LDMOS technology. This device delivers 50W of output power at a test voltage of 28V, with a typical gain of 16dB. It is designed for high-frequency applications and is supplied in the NI-880H-2L package, suitable for chassis mounting and delivered on tape and reel. The MRF7S21170HR5 is utilized in demanding wireless infrastructure and base station applications, leveraging its robust performance characteristics for efficient power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Power - Output | 50W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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