MRF7S21170HR3
RF MOSFET LDMOS 28V NI880HManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF7S21170HR3 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device operates at 2.17 GHz, delivering 50W of output power with a typical gain of 16dB at a test voltage of 28V. Engineered with LDMOS technology, it provides robust performance and efficiency. The MRF7S21170HR3 is supplied in the NI-880H-2L package, a 2-lead variant of the NI880H, suitable for chassis mounting. Its specified parameters include a rated voltage of 65V and a test current of 1.4A. This component is commonly utilized in base stations and power amplifier modules within the telecommunications and broadcast industries. The unit is provided on tape and reel for automated handling.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Power - Output | 50W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
